LONDON — Fujitsu Laboratories Ltd. has said it has developed a millimeter-waveband power amplifier (PA) using a standard 90-nm CMOS process technology. Fujitsu Labs (Tokyo, Japan) applied CMOS ...
Tokyo, Japan -- Feb 4, 2008 -- Fujitsu Laboratories, Ltd. today announced the development of a millimeter-waveband power amplifier (PA) using standard 90nm CMOS process technology. Targeting ...
CMOS amplifier design remains a critical focus in modern electronic research, particularly with the growing demand for low power consumption and high performance in integrated circuits. Central to ...
Santa Clara, CA and Kyoto, Japan, Sept. 09, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the TLR1901GXZ, an ultra-compact CMOS operational amplifier (op amp) that ...
A single chip power amplifier for GPRS phones, made in pure CMOS and requiring no external components, has been unveiled by Silicon Laboratories. It’s the first time all the disparate components that ...
This diagram shows the standard layout of transistors in cell phone power amplifiers, at left, and a new highly efficient amplifier design, at right. The new design could help make possible ...
— Qualcomm Technologies' QFE2320 and QFE2340 chips enable sleeker mobile devices, global multimode LTE roaming and is key component of Qualcomm RF360 Front End Solution — SAN DIEGO, Feb. 24, 2014 ...
TOKYO--(BUSINESS WIRE)--NTT Corporation (President and CEO: Akira Shimada, "NTT") and researchers with the Tokyo Institute of Technology (President: Kazuya Masu; “Tokyo Tech”) announced the successful ...
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