The drift-diffusion equations relevant for application to current flow in the double gate transistor are addressed. In standard operation this device has both source and drain heavily doped with the ...
It has long been known that the simple combination of a depletion-mode MOSFET (and before these were available, a JFET) and a resistor made a simple, serviceable current source such as that seen on ...
Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
Able to withstand large voltages with fast switching speeds allows wide bandgap materials such as SiC and GaN to promise the required performance for emerging high power applications. Crucial to ...
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