EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...
This article presents the basic analysis and design equations of a 2-transistor configuration using both polarities of transistors: the “complementary” two-BJT configuration. Transistor combinations ...
EPC’s first Gen 7 eGaN power transistor, the 40-V EPC2366, delivers up to 3× better performance than equivalent silicon ...
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