If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...
Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...
Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...
Silicon-carbide (SiC) MOSFETs have made significant inroads in the power semiconductor industry thanks to a range of benefits over silicon-based switches. These include faster switching, higher ...
Vishay has introduced a 30V n-channel mosfet with an on-resistance of 1.5mΩ (typ) at 4.5Vgate while achieving a 29.8mΩnC gate figure-of-merit (FoM). “The SiSS52DN’s FoM represents a 29% improvement ...
LEIDEN, Netherlands and MILPITAS, Calif., July 20, 2017 (GLOBE NEWSWIRE) -- IXYS Corporation (NASDAQ:IXYS), a global manufacturer of power semiconductors and integrated circuits (ICs) for energy ...
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