Researchers have fabricated High photosensitivity back-gated field-effect phototransistors made of only 20 nanometer thick molybdenum diselenide crystals by facile mechanical cleavage and transfer of ...

Prof Zhang Zhiyong's team at Peking University developed a heterojunction-gated field-effect transistor (HGFET) that achieves high sensitivity in short-wave infrared detection, with a recorded ...

“In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density ...

Peking University, December 3rd, 2024: Prof Zhang Zhiyong’s team developed a heterojunction-gated field-effect transistor (HGFET) that achieves high sensitivity in short-wave infrared detection, with ...

Neural implants are set to be revolutionised by a new type of graphene transistor with a liquid gate. The emerging technology of neural prostheses has the power to change what it means to be human.

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

Despite their ultra-thin physical size, the devices showed excellent field-effect phototransistor characteristics. The measured photoresponsivity of 97.1 AW-1 at zero back gate voltage was higher than ...