Silvaco Group, Inc., a provider of TCAD and EDA software, has announced that Excelliance MOS has adopted its Design Technology Co-Optimization (DTCO) flow, incorporating Victory TCAD and UTMOST IV ...
The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...
A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...
A conceptual diagram of diluted hydrogen annealing of SiO 2 /SiC structure. The background scenery is inside the Class 1 cleanroom located in Graduate School of Engineering, The University of Osaka.
Infineon Technologies AG introduced its first power switching devices designed specifically for use in space and avionics applications. Infineon Technologies AG introduced its first power switching ...
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...
A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work ...
A technical paper titled “Low-Power Charge Trap Flash Memory with MoS 2 Channel for High-Density In-Memory Computing” was published by researchers at Kyungpook National University, Sungkyunkwan ...
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