Scientists at Germany’s Fraunhofer Institute for Solar Energy Systems (ISE) have investigated gallium-doping in p-type silicon wafers as a route to better performance. Testing these specially produced ...

This high performance is enabled by p-type doping through nitric oxide (NO) treatment at 100 °C for 30 minutes. Furthermore, we scaled the channel length down to 50 nm, integrated a high-κ gate ...

A recent article in Nature Communications introduced a method for precise p- and n-type substitutional doping of two-dimensional (2D) semiconductors. This method was applied for the one-step growth of ...

The carrier concentration and conductivity in p-type monovalent copper semiconductors can be significantly enhanced by adding alkali metal impurities. Doping with isovalent and larger-sized alkali ...

Single-walled carbon nanotubes (SWCNTs) possess advantages of high thermal stability, high flexibility, lightweight, easy controllable doping level. Their thermoelectric properties are almost ...

In the case of nominally undoped semiconductors, the carrier type is often governed by the defects with a low ionization energy and low formation enthalpy. This generally renders carrier-type ...

(Nanowerk News) The carrier concentration and conductivity in p-type monovalent copper semiconductors can be significantly enhanced by adding alkali metal impurities, as shown recently by Tokyo Tech ...