EDN

TDDB or not TDDB (On Wafer)?

Time-dependent dielectric breakdown (TDDB) testing is an indispensable step in qualifying semiconductor gate-oxide integrity, and vendors are responding with the instrumentation and probing ...
Semiconductor Engineering

Improving Reliability For GaN And SiC

Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in ...
Business Wire

Oxford Instruments Asylum Research Releases nanoTDDB high voltage accessory for Jupiter XR, Large Sample Atomic Force Microscope

SANTA BARBARA, Calif.--(BUSINESS WIRE)--Oxford Instruments Asylum Research today announces the release of its new nanoscale time-dependent dielectric breakdown (nanoTDDB) high voltage accessory for ...
Nature

Demonstration of high threshold voltage Tri-gate hybrid ferroelectric gate stack GaN HEMT with 1.2 GW/cm2 Baliga's figure-of-merit and highly robust TDDB stability

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
EDN

SIGNAL CHAIN BASICS #47: Life expectancy of digital capacitive isolators

Digital isolators, when applied in harsh industrial environments, can experience large voltage differences across the isolation barrier due to high-common-mode-voltage transients. In the case of ...